Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
Identifieur interne : 00C709 ( Main/Repository ); précédent : 00C708; suivant : 00C710Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
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Abstract
This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb-, InGaAsSb-, InGaSb- and InAsSbP. Peculiarities of Zn diffusion in each of these materials and different ways of tailoring the Zn diffusion profile for fabrication of optimized emitters in TPV cells are discussed. © 2003 American Institute of Physics
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Bett</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg, Germany</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg</wicri:regionArea><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Mauk, Michael G" uniqKey="Mauk M">Michael G. 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Dutta</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Rensselaer Polytechnic Institute, Troy, New York 12180-3590</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0043354</idno><date when="2003-01-25">2003-01-25</date><idno type="stanalyst">PASCAL 03-0043354 AIP</idno><idno type="RBID">Pascal:03-0043354</idno><idno type="wicri:Area/Main/Corpus">00DF44</idno><idno type="wicri:Area/Main/Repository">00C709</idno></publicationStmt><seriesStmt><idno type="ISSN">0094-243X</idno><title level="j" type="abbreviated">AIP conf. proc.</title><title level="j" type="main">AIP conference proceedings</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony compounds</term><term>Diffusion</term><term>Direct energy conversion</term><term>Electric power generation</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Impurity distribution</term><term>Indium compounds</term><term>Thermophotovoltaic cells</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460J</term><term>8460R</term><term>6835F</term><term>Etude expérimentale</term><term>Zinc</term><term>Diffusion(transport)</term><term>Cellule thermophotovoltaïque</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Antimoine composé</term><term>Conversion directe énergie</term><term>Production énergie électrique</term><term>Distribution impureté</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb-, InGaAsSb-, InGaSb- and InAsSbP. Peculiarities of Zn diffusion in each of these materials and different ways of tailoring the Zn diffusion profile for fabrication of optimized emitters in TPV cells are discussed. © 2003 American Institute of Physics</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0094-243X</s0></fA01><fA02 i1="01"><s0>APCPCS</s0></fA02><fA03 i2="1"><s0>AIP conf. proc.</s0></fA03><fA05><s2>653</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP</s1></fA08><fA11 i1="01" i2="1"><s1>SULIMA (Oleg V.)</s1></fA11><fA11 i1="02" i2="1"><s1>BETT (Andreas W.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAUK (Michael G.)</s1></fA11><fA11 i1="04" i2="1"><s1>BER (Boris Ya.)</s1></fA11><fA11 i1="05" i2="1"><s1>DUTTA (Partha S.)</s1></fA11><fA14 i1="01"><s1>AstroPower Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg, Germany</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Ioffe Institute of Physics and Technology,26 Polytechnicheskaya, St. Petersburg 194021, Russia</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Rensselaer Polytechnic Institute, Troy, New York 12180-3590</s1><sZ>5 aut.</sZ></fA14><fA20><s1>402-413</s1></fA20><fA21><s1>2003-01-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21757</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0043354</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>AIP conference proceedings</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb-, InGaAsSb-, InGaSb- and InAsSbP. 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